Part Number: BDW47G
Function: 100V, 15A, PNP Power Transistor
Package: TO-220 Type
Manufacturer: ON Semiconductor
Image and Pinouts:
Description
The BDW47G is 100V, 15A, Darlington Complementary Silicon Power Transistor.
This series of plastic, medium-power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.
Features
1. High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc.
2. Collector Emitter Sustaining Voltage @ 30 mAdc:
(1) VCEO(sus) = 80 Vdc (min) − BDW46
(2) 100 Vdc (min) − BDW42/BDW47
3. Low Collector Emitter Saturation Voltage :
(1) VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc, 3.0 Vdc (max) @ IC = 10.0 Adc
4. Monolithic Construction with Built−In Base Emitter Shunt resistors
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 100 V
2. Collector to Emitter Voltage: Vceo = 100 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 15 A
5. Collector Dissipation : Pc = 85 W ( Tc=25°C )
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Other data sheets are available within the file: BDW42G, BDW46, BDW46G, BDW47
BDW47G Datasheet PDF Download
