Part Number: BSS123
Function: 100V, 0.17A, N-Ch, MOSFET
Package: SOT-23 Type
Manufacturer: Diodes Incorporated.
Image and Pinouts:
Description
This is 100V, 0.17A, N-CHANNEL ENHANCEMENT MODE MOSFET.
These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These productshave been designed to minimizon-state resistance while provide rugged, reliable, and fast switching performance.
Features and Benefits :
1. Low Gate Threshold Voltage
2. Low Input Capacitance
3. Fast Switching Speed
4. Low Input/Output Leakage
5. High Drain-Source Voltage Rating
6. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
7. Halogen and Antimony Free. “Green” Device (Note 3)
8. Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data :
1. Case : SOT23
2. Case Material : Molded Plastic. UL Flammability Classification Rating 94V-0
3. Moisture Sensitivity : Level 1 per J-STD-020
4. Terminals : Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
5. Terminal Connections : See Diagram
6. Weight : 0.008 grams (Approximate)
Other data sheets are available within the file: BSS123-7-F, BSS123Q-13, BSS123Q-7