BSS138 Datasheet PDF – Vdss=50V, 0.22A, N-ch, MOSFET

Part Number: BSS138, Marking : SS

Function: 50V, 0.22A, N-Channel MOSFET

Package: SOT-23 Package

Manufacturer: Fairchild Semiconductor, ON Semicondcutor




The BSS138 is N-Channel Logic Level Enhancement Mode Field Effect Transistor.

This N-Channel enhancement mode field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. The BSS138 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.





1. 0.22 A, 50 V. RDS(ON) = 3.5Ω @ VGS = 10 V RDS(ON) = 6.0Ω @ VGS = 4.5 V

2. High density cell design for extremely low RDS(ON)

3. Rugged and Reliable

4. Compact industry standard SOT-23 surface mount package

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source Voltage: VDSS = 50 V
2. Gate to source Voltage: VGSS = ± 20 V
3. Drain current: ID = 0.22 A
4. Maximum Power Dissipation: Pd = 0.36 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

BSS138 Datasheet PDF

BSS138 pdf


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