Part Number: BSS84AKV
Marking : EG
Function: 50 V, 170 mA dual P-channel Trench MOSFET
Package: SOT-666 Type
Manufacturer: NXP Semiconductors.
Pinouts:
Description
This is a MOSFET. Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
1. Logic-level compatible
2. Very fast switching
3. Trench MOSFETtechnology
4. ESD protection up to 1 kV
5. AEC-Q101 qualified
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = – 50 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = – 170 mA
4. Total Power Dissipation : Ptot = 330 mW
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: BSS84AK, BSS84A, BSS84
BSS84AKV Datasheet PDF Download
