Part Number: BUT11AF
Function : Silicon Diffused Power Transistor
Package: SOT186 Type
Manufacturer: Philips Semiconductors
Image
Description
High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.
Pinout
Quick Reference Data
1. Collector-emitter voltage peak value (VBE = 0 V) : VCESM = 1000 V
2. Collector-emitter voltage (open base) : VCEO = 450 V
3. Collector current (DC) : IC = 5 A
4. Collector current peak value : ICM = 10 A
5. Total power dissipation (Ths < 25 °C) : Ptot = 20 W
6. Collector-emitter saturation voltage : VCEsat = 1.5 V
BUT11AF Datasheet
