Part Number: BUZ11
Function: 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET
Package: TO-220AB Type
Manufacturer: Fairchild Semiconductor
Image and Pinouts:
Description
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Features
1. 30A, 50V
2. rDS(ON)= 0.040Ω
3. SOA is Power Dissipation Limited
4. Nanosecond Switching Speeds
5. Linear Transfer Characteristics
6. High Input Impedance
7. Majority Carrier Device
8. Related Literature
– TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Absolute Maximum Ratings
1. Drain to Source Breakdown Voltage : VDS = 50 V
2. Drain to Gate Voltage (RGS= 20kΩ): VDGR = 50 V
3. Continuous Drain Current TC = 30’C : ID = 30 A
4. Pulsed Drain Current : IDM = 120 A
5. Gate to Source Voltage : VGS = ±20 V
6. Maximum Power Dissipation : PD = 75 W
Other data sheets are available within the file: BUZ11_NR4941
BUZ11 Datasheet PDF Download
