C2335 Transistor – 400V, 7A, NPN, Equivalent, 2SC2335 ( PDF )

Part Number: C2335, 2SC2335

Function: 400V, 7A, Silicon Power NPN Transistor

Package: TO-220AB

Manufacturer: NEC


C2335 pdf pinout


The C2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.

A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration:

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.

Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.


1. Low collector saturation voltage: VCE(sat) = 1.0 V MAX. @IC = 3.0 A

2. Fast switching speed: tf = 1.0 µs MAX. @IC = 3.0 A

3. Wide base reverse-bias SOA: VCEX(SUS)1 = 450 V MIN. @IC = 3.0 A


C2335 pdf pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 500 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 7 A

5. Total Power Dissipation : Pc = 1.5 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C


1. high-speed high-voltage switch

C2335 PDF Datasheet