This is one of the transistor types. A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.
Part Number: C5198
Function: 140V, 10A, NPN Transistor
Package: TO-3PN Type
Manufacturer: Toshiba Semiconductor
See the preview image and the C5198 transistor PDF file for more information.
C5198 is Silicon NPN Triple Diffused Type Transistor.
1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.
2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.
3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.
Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.
1. High breakdown voltage: VCEO = 140 V (min)
2. Complementary to 2SA1941
3. Suitable for use in 70-W high fidelity audio amplifier’s output stage
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 140 V
2. Collector to Emitter Voltage: Vceo = 140 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 10 A
5. Collector Dissipation : Pc = 100 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 4.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. […]
1. Power Amplifier