C5387 PDF Datasheet - 600V, 10A, NPN Transistor

Part Number: C5387, 2SC5387

Function: 600V, 10A, NPN Transistor

Package: TO-3ML Type

Manufacturer: Toshiba Semiconductor

Images:

Description

C5387 is 600V, 10A, SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR.

A NPN transistor is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.

The NPN transistor is used to amplify or switch electronic signals and is widely used in many electronic circuits. It works by controlling the current flow between the collector and emitter terminals through the base terminal.

When a small current is applied to the base, it controls a much larger current between the collector and emitter, making the NPN transistor an effective amplifier or switch.

Features

1. High Voltage : VCBO = 1500 V

2. Low Saturation Voltage : VCE (sat) = 3 V (Max.)

3. High Speed : tf = 0.15 μs (Typ.)

4. Collector Metal (Fin) is Fully Covered with Mold Resin.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 600 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 10 A

5. Collector Dissipation : Pc = 50 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION

2. DISPLAY, COLOR TV

3. HIGH SPEED SWITCHING APPLICATIONS