C5802 Transistor – 800V, 10A, NPN, Equivalent, 2SC5802

Part Number: C5802, 2SC5802, KSC5802

Function: 800V, 10A, NPN Transistor

Package: TO-3P type

Manufacturer: SavantIC

Images:C5802 pdf pinout


C5802 is 800V, 10A, Silicon NPN Power Transistor. This is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration:

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.

Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.


1. With TO-3P(H)IS package

2. High voltage;high speed

3. Wide area of safe operation

C5802 datasheet transistor

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 800 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 10 A

5. Collector Dissipation : Pc = 60 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C


1. For high voltage color display horizontal deflection output applications

C5802 PDF Datasheet