Fairchild

G60N100 Datasheet – 1000V, 60A, NPT Trench IGBT

Posted on by pinout

Part Number: G60N100, FGL60N100BNTD, G60N100BNTD

Function :  1000V, 60A, NPT Trench IGBT

Package: TO-264 3L Type

Manufacturer: Fairchild, ON Semiconductor

Image
G60N100 mosfet
Description

This is 1000V, 60A, NPT Trench IGBT.

Using Fairchild’s proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.

Pinout for G60N100

G60N100 datasheet pdf pinout

Features

1. High Speed Switching
2. Low Saturation Voltage: VCE(sat) = 2.5 V @ IC= 60 A
3. High Input Impedance
4. Built-in Fast Recovery Diode

Applications

1. Uninterruptible Power Supply
2. Other Industrial

Official Homepage

https://www.onsemi.com/products/discretes-drivers/igbts/fgl60n100bntd

G60N100 Datasheet


 

Similar features and reference parts


 

Related articles across the web

IRF540N Datasheet PDF – 100V, 33A, MOSFET, Transistor

Posted on by pinout

Part Number: IRF540N

Function: 33A, 100V, HEXFET N-Channel, Power MOSFET

Package: TO-220AB Type

Manufacturer: International Rectifier, Fairchild Semiconductor

Image

IRF540N MOSFET

Description

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Pinouts:

IRF540N datasheet

Description

1. Ultra Low On-Resistance
– rDS(ON)= 0.040Ω, VGS = 10V

2. Simulation Models
– Temperature Compensated PSPICE™ and SABER© Electrical Models
– Spice and SABER© Thermal Impedance Models

3. Peak Current vs Pulse Width Curve

4. UIS Rating Curve

 

IRF540N Datasheet PDF Download

IRF540N pdf


Other data sheets are available within the file: IRF540