IR2153 Datasheet – 600V, Half-Bridge Gate Driver – IR

This is one of the gate driver types.

Part Number: IR2153, IR2153S

Function : SELF-OSCILLATING HALF-BRIDGE DRIVER

Package: DIP 8, SO-8 Type

Manufacturer: International Rectifier, Infineon

See the preview image and the PDF file for more information.

Image

ir2153-half-bridge-gate-driver

Description

The IR2153 is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The front end features a programmable oscillator which is similar to the 555 timer. The output drivers feature a high pulse current buffer stage and an internal deadtime designed for minimum driver cross-conduction. Propagation delays for the two channels are matched to simplify use in 50% duty cycle applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration that operates off a high voltage rail up to 600 volts.

A half-bridge gate driver is a device used to control the switching of power MOSFETs or IGBTs in a half-bridge topology. A half-bridge topology is a common configuration used in power electronics, such as in DC-DC converters and motor control applications.

In a half-bridge topology, two power devices (MOSFETs or IGBTs) are connected in series across a DC bus, with their junction connected to the load. One device is connected to the high side of the DC bus and the other to the low side. By controlling the gate voltage of each device, the half-bridge can switch the polarity of the voltage across the load.

IR2153 Pinout

ir2153-datasheet-pinout

 

Features

1. Floating channel designed for bootstrap operation
(1) Fully operational to +600V
(2) Tolerant to negative transient voltage dV/dt immune

2. Undervoltage lockout

3. Programmable oscillator frequency

4. Lower power level-shifting circuit

5. Constant LO, HO pulse widths at startup

6. Lower di/dt gate driver for better noise immunity

 

IR2153 Datasheet PDF


 

 

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IRG4PC50W Datasheet PDF – 600V, 55A, IGBT, Transistor

Part Number: IRG4PC50W

Function: 600V, 55A, Insulated Gate Bipolar Transistor

Package: TO-247AC Type

Manufacturer: International Rectifier, ( https://www.infineon.com/ )

Image and Pinouts:

IRG4PC50W datasheet

Description

This is 600V, 55A, insulated-gate bipolar transistor.

 

Features

1. Designed expressly for Switch-Mode Power Supply and PFC (power factor correction)applications

2. Industry-benchmark switching losses improve efficiency of all power supply topologies

3. 50% reduction of Eoff parameter

4. Low IGBT conduction losses

5. Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

Benefits :

1. Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz(“hard switched” mode)

2. Of particular benefit to single-ended converters and boost PFC topologies 150W and higher

3. Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz)

Other data sheets are available within the file:  IRG4PC50, IRG4PC50WPBF

IRG4PC50W Datasheet PDF Download


IRG4PC50W pdf