Part Number: G4BC30KD, IRG4BC30KD

Function: 600V, 16A, IGBT

Package: TO-220AB Type

Manufacturer: International Rectifier

Image:

Description

This is 600V, 16A, IGBT With Ultrafast Soft Recovery Diode.

Benefits :

1. Latest generation 4 IGBTs offer highest power density motor controls possible

2. HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI andswitching losses

3. This part replaces the IRGBC30KD2 and IRGBC30MD2 products

Pinout

 

Features

1. High short circuit rating optimized for motor control, tsc=10µs, @360V VCE(start), TJ= 125°C,VGE= 15V

2. Combines low conduction losses with high switching speed

3. Tighter parameter distribution and higher efficiency than previous generations

4 IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery antiparallel diodes

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 16 A (Tc = 100°C)

4. Collector dissipation : Pc = 100 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

G4BC30KD Datasheet PDF

 

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This is one of the semiconductor types.

This part name is IRG4PC40UD, G4PC40UD.

This product has 600V, 40V, UltraFast IGBT functions.

The package is TO-247AC Type

The manufacturers of this product is International Rectifier.

See the preview image and the PDF file for more information.

Image and Pinouts:

Description

The G4PC40UD is N-Channel, 600V, 40A, UltraFast IGBT.

The IGBT is insulated-gate bipolar transistor.

Features

1. UltraFast : Optimized for high operating frequencies 8-40 kHz in hard switching, >200  kHz in resonant mode

2. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

3. IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

4. Industry standard TO-247AC package

Benefits :

1. Generation-4 IGBT’s offer highest efficiencies available

2. IGBT’s optimized for specific application conditions

3. HEXFRED diodes optimized for performance with IGBT’s . Minimized recovery characteristics require less/no snubbing

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 40 A (Tc = 25°C)

4. Collector dissipation : Pd = 160 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

G4PC40UD Datasheet PDF Download

Other data sheets are available within the file: G4PC40, IRG4PC40UD