Pinout

SB5B0S PDF – 5A, 100V, Diode, Schottky Barrier Rectifier

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Part Number: SB5B0S

Function: 5A, 100V, SCHOTTKY BARRIER RECTIFIER,  DIODE

Package: Axial Type, DO-201AD

Manufacturer: EIC discrete Semiconductors ( www.eicsemi.com )

Images:

1 page
SB5B0S pdf diode

 

Description

SB5B0S is 5A, 100V, Diode, Rectifier. The Schottky Barrier Diode (SBD) is formed by the junction of a metal contact and a semiconductor material, typically silicon or gallium arsenide. Unlike a p-n junction diode, which uses a p-type and an n-type semiconductor material, the SBD uses a metal and a semiconductor material. The metal is chosen for its low work function, which results in a small barrier height at the metal-semiconductor interface, allowing for efficient carrier injection.

The main advantage of an SBD is its fast switching speed and low forward voltage drop, which makes it ideal for high-frequency and high-speed applications. However, SBDs have a relatively low reverse voltage rating compared to p-n junction diodes and can suffer from thermal instability due to the metal-semiconductor interface.

Features

1. High current capability

2. High surge current capability

3. High reliability

4. High efficiency

5. Low power loss

6. Low cost

7. Low forward voltage drop

8. Pb / RoHS Free

 

2 page
SB5B0S datasheet

Mechanical Data :

1. Case : D2A Molded plastic

2. Epoxy : UL94V-O rate flame retardant

3. Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed

4. Polarity : Color band denotes cathode end

5. Mounting position : Any

6. Weight : 0.645 gram

 

SB5B0S PDF Datasheet

SB5B0S pdf

PJ99 PDF Datasheet – 40V, Junction Field-Effect Transistor

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Part Number: PJ99

Function: Silicon Junction Field-Effect Transistor

Die Size : 0.012″ x 0.012″

Manufacturer: InterFET Corporation ( www.interfet.com )

Images:PJ99 pdf transistor

Description

This is 40V, Silicon Junction Field-Effect Transistor. A Junction Field-Effect Transistor (JFET) is a type of field-effect transistor (FET) that is primarily used for electronic switching and amplification of electrical signals. JFETs belong to the family of unipolar transistors, meaning they rely on the movement of charge carriers of one polarity (either electrons or holes) for their operation.

1. Three Terminals: A JFET has three terminals: the source (S), the drain (D), and the gate (G). The gate terminal controls the flow of charge carriers between the source and drain.

2. Voltage-Controlled: JFETs are voltage-controlled devices, which means that the voltage applied to the gate terminal modulates the flow of current between the source and drain terminals. This control is achieved through the electric field created by the voltage on the gate.

Features

1. General Purpose Amplifier

2.  Analog Switch Absolute

Maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.021″ X 0.021″ All Bond Pads = 0.004″ Sq. Substrate is also Gate. Devices in this Databook based on the PJ99 Process. Datasheet 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN5115 IFN5116 Datasheet IFP44 J174, J175 J176, J177 P1086, P1087 VCR3P At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage Turn On Delay Time Rise Time Turn Off Delay Time Fall Time rds(on) gfs […]

PJ99 datasheet

PJ99 PDF Datasheet