TEC1-12704 PDF Datasheet – Thermoelectric Cooling Module

This post explains for the semiconductor thermo module.

The Part Number is TEC1-12704.

The function of this semiconductor is Thermoelectric cooling module.

Manufacturer: WELLEN TECHNOlOGY

Preview images :

1 page
TEC1-12704 pdf

Description

The TEC1-12704 is Thermoelectric cooling module. This is a device that utilizes the principle of thermoelectric effect to transfer heat from one side of the module to the other. This device typically consists of thermoelectric materials sandwiched between two heat sinks, with electrical connections made to each of the thermoelectric materials. When a voltage is applied to the thermoelectric materials, heat is transferred from one heat sink to the other through the thermoelectric effect. This can be used for cooling or heating applications.

Thermoelectric cooling modules are often used in electronics to cool components such as CPUs and GPUs, as well as in scientific and industrial applications where precise temperature control is required. These devices have several advantages, including high efficiency, fast response time, and the ability to cool or heat objects to specific temperatures. However, they are relatively expensive and can be difficult to install and maintain.

TEC1-12704 datasheet

Parameters :

1. Internal resistance : 3.02 Ω ± 10%

2. Imax. : 4.0 A

3. Vmax. : 15.4 V

TEC1-12704 PDF Datasheet

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CS20N50ANH PDF – 500V, 20A, N-Ch, MOSFET, TO-3P ( Datasheet )

Part Number: CS20N50ANH

Function: 500V, 20A, N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Huajing Discrete Devices

Images:

CS20N50ANH pdf datasheet

Description

CS20N50ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-3PN, which accords with the RoHS standard.

Features

1. Fast Switching

2. Low ON Resistance(Rdson≤0.3Ω)

3. Low Gate Charge (Typical Data:63nC)

4. Low Reverse transfer capacitances(Typical:25pF)

5. 100% Single Pulse avalanche energy Test

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 20 A

4. Power Dissipation: Pd = 230 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Power switch circuit of electron ballast and adaptor

 

 

CS20N50ANH PDF Datasheet


CS20N50ANH pdf