Part Number: CS20N50ANH
Function: 500V, 20A, N-Channel MOSFET
Package: TO-3P Type
Manufacturer: Huajing Discrete Devices
Images:
Description
An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
CS20N50ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-3PN, which accords with the RoHS standard.
Features
1. Fast Switching
2. Low ON Resistance(Rdson≤0.3Ω)
3. Low Gate Charge (Typical Data:63nC)
4. Low Reverse transfer capacitances(Typical:25pF)
5. 100% Single Pulse avalanche energy Test
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 20 A
4. Power Dissipation: Pd = 230 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Power switch circuit of electron ballast and adaptor
CS20N50ANH PDF Datasheet
