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G20N50C PDF Datasheet – 500V, 20A, Power MOSFET

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Part Number: G20N50C, SIHG20N50C

Function: 500V, 20A, Power MOSFET

Package: TO-247AC Type

Manufacturer: Vishay

Images:G20N50C pinout pdf

Description

G20N50C is 500V, 20A, Power MOSFET.

Features

• Low Figure-of-Merit Ron x Qg

• 100 % Avalanche Tested

• High Peak Current Capability

• dV/dt Ruggedness

• Improved Trr/Qrr

• Improved Gate Charge

• High Power Dissipations Capability

 

G20N50C datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 20 A

4. Maximum Power Dissipation: Pd = 250 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

G20N50C PDF Datasheet

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G4BC20KD PDF Datasheet – 600V, IGBT – IRG4BC20KD

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This post explains for the IGBT.

The Part Number is IRG4BC20KD, G4BC20KD.

The function of this semiconductor is 600V, 9A, UltraFast IGBT.

The package is TO-220AB Type

Manufacturer: International Rectifier

Preview images :G4BC20KD pdf pinout

Description

G4BC20KD IS INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation

• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

• Industry standard TO-220AB package C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.27V @VGE = 15V, IC = 9.0A n-ch an nel Benefits

 

G4BC20KD datasheet igbt

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Emitter Voltage: Vces = 600 V

2. Gate to Emitter Voltage: VGes = ± 20 V

3. Collector Current: Ic = 16 A

4. Drain power dissipation: PD = 60 W

5. Operating Junction Temperature: Tch = -55 to +150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Benefits:

• Latest generation 4 IGBTs offer highest power density motor controls possible

• HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses

• This part replaces the IRGBC20KD2 and IRGBC20MD2 products

• For hints see design tip 97003

 

G4BC20KD PDF Datasheet