RTL8363SB PDF Datasheet – Ethernet Switch Controller

Part Number: RTL8363SB

Function: LAYER 2 MANAGED 2+2-PORT 10/100/1000M SWITCH CONTROLLER

Package: LQFP128 Type

Manufacturer: Realtek

Images:RTL8363SB pdf controller

Description

The RTL8363SB is an LQFP128, high-performance 2+2-port 10/100/1000M Ethernet switch. It
features low-power integrated dual-port Gigabit PHYs that support 1000Base-T, 100Base-TX, and 10Base-T.

For specific applications, the RTL8363S supports two extra interfaces that can be configured as
GMII/RGMII/MII interfaces. The RTL8363SB integrates all the functions of a high-speed switch system; including SRAM for packet buffering, non-blocking switch fabric, and internal register management into a single CMOS device. Only a 25MHz crystal is required; an optional EEPROM is offered for internal register configuration.

In order to support flexible traffic classification, the RTL8363 supports 64-entry ACL rule check and
multiple actions options. Each port can optionally enable or disable the ACL rule check function. The
ACL rule key can be based on packet physical port, Layer2, Layer3, and Layer4 information. When an
ACL rule matches, the action taken is configurable to Drop/Permit/Redirect/Mirror, change priority value
in 802.1q/Q tag, and rate policing. The rate policing mechanism supports from 8Kbps to 1Gbps (in 8Kbps
steps).

Features

1. Single-chip 2+2-port gigabit non-blocking switch architecture

2. Embedded Dual-port 10/100/1000Base-T PHY

3. Each port supports full duplex 10/100/1000M connectivity (half duplex only supported in 10/100M mode)

4. Extra Interface (Extension GMAC0 and Extension GMAC1) supports

5. Dual-port Media Independent Interface (MII)

6. Dual-port Reduced Gigabit Media Independent Interface (RGMII)

7. Dual-port Gigabit Media Independent Interface (GMII)

Pinouts:

RTL8363SB datasheet pinout

RTL8363SB PDF Datasheet

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FU9024N PDF Datasheet – 55V, 11A, MOSFET – IRFU9024N

This post explains for the MOSFET.

The Part Number is FU9024N, IRFU9024N.

The function of this semiconductor is P-Channel MOSFET.

The package is TO-252AA, TO-251AA Type

Manufacturer: International Rectifier

Image:

FU9024N mosfet

Pinout : 1. Gate 2. Drain 3. Source 4. Drain

 

Description

The FU9024N is -55V, -11A, P-Channel HEXFET Power MOSFET. A P-channel HEXFET Power MOSFET is a type of power metal-oxide-semiconductor field-effect transistor (MOSFET) designed for high-performance switching and amplification of electrical signals. The “P-channel” designation indicates that it is a type of MOSFET with a P-channel enhancement mode, which means it conducts current when a negative voltage is applied to its gate terminal.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

1.HEXFET Technology: HEXFET stands for “Hexagonal Flat Package Enhancement-Mode MOSFET.” It’s a trademarked technology developed by International Rectifier (now part of Infineon Technologies) that is known for providing high-performance characteristics, including low on-resistance (RDS(on)) and fast switching speeds.

Pinout

FU9024N pdf datasheet

Features

1. Ultra Low On-Resistance

2. P-Channel

3. Surface Mount (IRFR9024N)

4. Straight Lead (IRFU9024N)

5. Advanced Process Technology

6. Fast Switching

7. Fully Avalanche Rated

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 55 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = – 11 A (Tc = 25°C)

4. Power Dissipation: Pd = 38 W  (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

FU9024N PDF Datasheet


FU9024N pdf