Pinout

7808 PDF Datasheet – 1A, 8V, Positive Voltage Regulator

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This post explains for the Voltage Regulator.

The Part Number is 7808, KA7808, MC7808AC, MC7808C.

The function of this semiconductor is 3-Terminal, 1A, 8V, Positive Voltage Regulator.

The package is TO-220, D-Pak Type

Manufacturer: Fairchild Semiconductor, Motorola

1 page
7808 pdf pinout

Description

The KA7808 / KA78 8A / 7808 series of three-terminal positive regulator are available in the TO-220/D-PAK package and with several fixed output voltages, making them useful in a wide range of applications. Each type employs internal current limiting, thermal shut down and safe operating area protection, making it essentially indestructible. If adequate heat sinking is provided, they can deliver over 1A output current. Although designed primarily as fixed voltage regulators, these devices can be used with external components to obtain adjustable voltages and currents.

7808 datasheet

Features

1. Output Current up to 1A

2. Output Voltages of 8 V

3. Thermal Overload Protection

4. Short Circuit Protection

5. Output Transistor Safe Operating Area Protection

7808 PDF Datasheet

7808-regulator pdf

G4BC20KD PDF – 600V, 16A, UltraFast IGBT – IRG4BC20KD

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Part Number: G4BC20KD, IRG4BC20KD

Function: 600V, 16A, IGBT ( INSULATED GATE BIPOLAR TRANSISTOR )

Package: TO-220AB Type

Manufacturer: International Rectifier

Preview Images:

G4BC20KD pinout igbt

Description

G4BC20KD is INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
previous generation

• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in
bridge configurations

Benefits:

• Latest generation 4 IGBTs offer highest power density motor controls possible

• HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses

• This part replaces the IRGBC20KD2 and IRGBC20MD2 products

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter Voltage: Vces = 600 V

2. Gate to emitter Voltage: Vges = ± 20 V

3. Collector Current: Ic = 16 A

4. Collector Dissipation: Pc = 60 W

5. Junction temperature: Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

G4BC20KD pdf datasheet

G4BC20KD PDF Datasheet