Part Number: 2SC3420

Function: 20V, 5A, NPN Transistor

Package: TO-126 Type

Manufacturer: Toshiba

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Description

The C3420 is 20V, 5A, Silicon NPN Epitaxial Type Transistor. This is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

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Features:

1. High DC current gain :

(1) hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A)

(2) hFE = 70 (min) (VCE = 2 V, IC = 4 A)

2. Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)

3. High collector power dissipation :

(1) PC = 10 W (Tc = 25°C),

(2) PC = 1.5 W (Ta = 25°C)

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 50 V

2. Collector to Emitter Voltage: Vceo = 20 V

3. Emitter to Base Voltage: Vebo = 8 V

4. Collector Current: Ic = 5 A

5. Collector Dissipation : Pc = 1.5 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. Strobe Flash

2. Audio Power Amplifier

 

C3420 PDF Datasheet