Pinout

C5198 PDF Datasheet – 140V, 10A, 2SC5198, NPN Transistor

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This is one of the transistor types.

Part Number: C5198

Function: 140V, 10A, NPN Transistor

Package: TO-3PN Type

Manufacturer: Toshiba Semiconductor

See the preview image and the C5198 transistor PDF file for more information.

Images:

C5198 transistor

Description

C5198 is Silicon NPN Triple Diffused Type Transistor.

:

Features

1. High breakdown voltage: VCEO = 140 V (min)

2. Complementary to 2SA1941

3. Suitable for use in 70-W high fidelity audio amplifier’s output stage

Pinouts:

C5198 pinout pdf

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 140 V

2. Collector to Emitter Voltage: Vceo = 140 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 10 A

5. Collector Dissipation : Pc = 100 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Note :

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 4.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  […]

C5198 datasheet transistor

Applications

1. Power Amplifier

C5198 PDF Datasheet

2P4M PDF – 2A / Passivated Process Thyristor

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This post explains for the Thyristor.

The Part Number is 2P4M.

The function of this semiconductor is 2.0 Ampere Passivated Process Thyristor.

The package is TO-202 Tyype

Manufacturer: Thinki Semiconductor

Preview images :

2P4M pinout datasheet

Description

 

ThinkiSemi 2P4M SCR with the parallel resistor between Gate and Cathode are especially recommended for use on straight hair, igniter, anion generator etc..

The 2P4M is a specific model of a thyristor, also known as a silicon-controlled rectifier (SCR). Thyristors are semiconductor devices commonly used for switching and controlling high-power electrical circuits.

The 2P4M is a four-layer, three-terminal device that consists of two P-type layers and two N-type layers. The “2P” in the name signifies the PNPN structure of the device, while “4M” indicates the specific design and characteristics of the thyristor.

MAIN Features:

TO-202 Pkg Outline Symbol Value IT(RMS) IGT VTM 2 ≤200 ≤1.5 ABSOLUTE MAXIMUM RATINGS Unit A μA V Internal structure A(2) K(1) RGK G(3) 3 2 1 Parameter Storage junction temperature range Operating junction temperature range Repetitive peak off-state voltage Repetitive peak reverse voltage Symbol Tstg Tj VDRM VRRM Value -40-150 -40-110 600 600 Unit ℃ ℃ V V RMS on-state current @ (TC=72℃) IT(RMS) 2 A Non repetitive surge peak on-state current (tp=10ms) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current Peak gate current (tp=20μs, Tj=110℃) Peak gate power (tp=20μs, Tj=110℃) Average gate power dissipation(Tj=110℃) ITSM I2t dI/dt IGM PGM PG(AV) 2 […]

2P4M pdf

2P4M PDF Datasheet