MIP2K20MS PDF – Silicon MOSFET Type IC

The Part Number is MIP2K20MS.

Marking Symbol is MIP2K2

The function of this semiconductor is Silicon MOS FET type integrated circuit.

The package is DIP 7 Pin type

Manufacturer: Panasonic

Preview images :

MIP2K20MS pinout

Description

The MIP2K20MS is Silicon MOS FET type integrated circuit.

Features:

1. Built-in jitter function

2. Built-in charge protection circuit

3. Built-in overheating, loadshorting and overvoltage protection circuits

Package:

Code DIP7-A1

Absolute Maximum Ratings Ta = 25°C±3°C
Parameter Symbol Rating Unit
DRAIN voltage VD – 0.3 to +700 V
VCC voltage VCC – 0.3 to +45 V
VDD voltage VDD – 0.3 to +8 V
Feedback voltage VFB – 0.3 to +8 V
Feedback current IFB 500 mA
CL pin voltage VCL – 0.3 to +8 V
CL pin current ICL 150 mA
Output peak current * IDP 0.95 A
Channel temperature Tch 150 °C
Storage temperature Tstg -55 to +150 °C […]

MIP2K20MS pdf datasheet

MIP2K20MS PDF Datasheet

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C5404 PDF Datasheet – 2SC5404, NPN Transistor – Toshiba

This post explains for the transistor.

The Part Number is C5404, 2SC5404.

The function of this semiconductor is 600V, NPN Transistor.

Manufacturer: Toshiba Semiconductor

Images and pinout

C5404 pdf datasheet transistor

Description

The C5404 is NPN Triple Diffused Mesa Type transistor. An NPN Triple Diffused Mesa Type transistor refers to a specific type of NPN (Negative-Positive-Negative) bipolar junction transistor (BJT) that utilizes a triple diffused mesa structure in its construction. This type of transistor is designed to provide enhanced performance and characteristics compared to standard NPN transistors.

Features:

1. High Voltage : VCBO = 1500 V
2. Low Saturation Voltage : VCE (sat) = 3 V (Max.)
3. High Speed : tf = 0.15 µs (Typ.)
4. Collector Metal (Fin) is Fully Covered with Mold Resin.

Absolute maximum ratings ( Tc=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V
2. Collector to Emitter Voltage: Vceo = 600 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 9 A
5. Total Dissipation : Pc = 50 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

C5404 pinout toshiba

NPN triple diffused mesa type transistors are commonly used in high-power and high-frequency applications, such as audio amplifiers, power supplies, RF (Radio Frequency) circuits, and other demanding electronic circuits. The triple diffused and mesa structure design enhances the transistor’s performance in terms of breakdown voltage, gain, and overall efficiency.

Applications:

1. Horizontal Deflection output for high resolution
2. High Speed Switching

C5404 PDF Datasheet

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