Pinout Archives - Page 338 of 3349

Description

FMGG26 is Ultra-Fast-Recovery Rectifier. ( Diode ). An Ultra Fast Recovery Rectifier (UFRR) is a type of semiconductor diode designed to have an extremely fast reverse recovery time compared to standard rectifier diodes. Reverse recovery time refers to the time it takes for a diode to switch from the conducting (forward-biased) state to the non-conducting (reverse-biased) state when the polarity of the voltage across the diode is reversed.

1. Fast Recovery Time: The defining feature of UFRRs is their exceptionally fast reverse recovery time, often measured in nanoseconds (ns) or less. This fast switching capability minimizes switching losses and reduces the potential for electromagnetic interference (EMI) in high-frequency applications.

2. High-Frequency Operation: UFRRs are well-suited for high-frequency applications where rapid switching is required. They are commonly used in switching power supplies, high-frequency inverters, and high-speed rectification circuits.

3. Low Forward Voltage Drop: UFRRs typically have a lower forward voltage drop (forward voltage) than standard rectifiers. This characteristic helps reduce conduction losses and improves overall efficiency in power conversion applications.

Part Number: 70T03GH, AP70T03GH

Function: 30V, 60A, N-Channel MOSFET, Transistor

Package: TO-252, TO-251 Type

Manufacturer: Advanced Power Electronics

Images: 70T03GH pdf pinout

Description

70T03GH is 30V, 60A, N-Channel Power MOSFET. This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP70T03GJ) are available for low-profile applications.

Features

1. Simple Drive Requirement

2. Low Gate Charge RDS(ON)

3. Fast Switching ID 60A

4. RoHS Compliant

70T03GH datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 60 A

4. Drain Power Dissipation: Pd = 53 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +175 °C

Pinout

FMGG26 PDF – 600V, Ultra-Fast-Recovery Rectifier, Diode

Description

FMGG26 PDF Datasheet

70T03GH Transistor – 30V, 60A, MOSFET, AP70T03GH

Description

Features

70T03GH PDF Datasheet