Part Number: J377, 2SJ377

Function: 60V, 5A, P-Channel MOSFET

Manufacturer: Toshiba Semiconductor

Images:

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Description

J377 is Silicon P-Channel MOS Type Field Effect Transistor (Metal-Oxide-Semiconductor Field-Effect Transistor). This is a type of MOSFET that is constructed using a p-type substrate. MOSFETs are electronic devices that are widely used as switches or amplifiers in electronic circuits.

Features

1. 4 V gate drive

2. Low drain-source ON-resistance : RDS (ON) = 0.16 Ω (typ.)

3. High forward transfer admittance : |Yfs| = 4.0 S (typ.)

4. Low leakage current : IDSS = – 100 μA (max) (VDS = – 60 V)

5. Enhancement mode : Vth = – 0.8 to – 2.0 V (VDS = – 10 V, ID = – 1 mA)

 

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Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = – 5 A

4. Drain Power Dissipation: Pd = 20 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Relay Drive, DC/DC Converter and Motor Drive

J377 PDF Datasheet

Part Number: 40N03GP

Function: 30V, 40A, N-channel MOSFET

Package: TO-220 Type

Manufacturer: Advanced Power Electronics

Images:

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Description

40N03GP is 30V, 40A, N-Channel Power MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is widely preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuits.

 

Features

1.  Low Gate Charge

2. Simple Drive Requirement

3. Fast Switching Characteristic […]

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Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 40 A

4. Total Power Dissipation: Pd = 50 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

40N03GP PDF Datasheet

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