This product integrates advanced trench MOSFET technology and Schottky diodes to maximize power efficiency and switching speed, and can be widely used in applications requiring high-efficiency power management.
Part Number: AO4712, A04712
Function: N-Channel Enhancement Mode Field Effect Transistor
Package: SO-8 Pin type
Manufacturer: Alpha & Omega Semiconductor
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Description
The AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4712 is Pb-free
(meets ROHS & Sony 259 specifications).
Features
The main feature is the monolithic integration of the Schottky diode. Compared to general diodes, the Schottky diode, which provides fast current transfer characteristics and low voltage drop, is effective in reducing the loss of reverse current during switching. This enables efficient switching and reduces switching loss, making it suitable for high-speed switching circuits.
1. VDS (V) = 30V
2. ID =11.2A (VGS = 10V)
3. RDS(ON) < 14.5mΩ (VGS = 10V)
4. RDS(ON) < 18mΩ (VGS = 4.5V)
Pinouts

Absolute maximum ratings ( Ta=25°C )
1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ± 12 V
3. Drain current: ID = 11.2 A
4. Total Power Dissipation: Pd = 3.1 W
5. Avalanche energy: Ear = 38 mJ
6. Channel temperature: Tch = 150 °C
7. Storage temperature: Tstg = -55 to +150 °C
A Soft Recovery MOSFET (SRFET)
A Soft Recovery MOSFET (SRFET) is a type of power MOSFET that features an integrated Schottky diode designed to minimize switching losses and improve efficiency in power conversion applications.
1. Integrated Schottky Diode:
Unlike standard MOSFETs, SRFETs have a built-in Schottky diode, which is a fast-switching diode known for its low forward voltage drop and quick recovery time. The integration of this diode helps reduce reverse recovery losses when the MOSFET switches between conducting and non-conducting states. This is particularly beneficial in circuits where rapid switching is required, such as in DC-DC converters and synchronous rectifiers. Schottky diodes are known for having a low forward voltage drop (typically 0.15V to 0.45V), which minimizes power loss and heat generation, enhancing the overall efficiency of the circuit.
2. Soft Recovery:
The term “soft recovery” refers to the smooth transition of the diode from its conducting state to its non-conducting state when the MOSFET switches off. Traditional diodes can cause abrupt changes that lead to high-voltage spikes and electromagnetic interference (EMI). In SRFETs, the soft recovery characteristic helps reduce these spikes, thereby minimizing EMI and noise, which is critical for sensitive electronic applications. This feature ensures a smoother current transition during the reverse recovery process, preventing sharp current spikes and providing a cleaner signal.




