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IRLR3105 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in power management applications, particularly in switching circuits. It is a member of the HEXFET series of power MOSFETs manufactured by Infineon Technologies.

Part Number: IRLR3105PbF, IRLU3105PbF

Function: 55V Single N-Channel Power MOSFET

Package: D-Pak Type

Manufacturer: IR, Infineon Technologies

Image and pinouts

IRLR3105 datasheet pdf

Description

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features

1. Planar cell structure for wide SOA

2. Optimized for broadest availability from distribution partners

3. Product qualification according to JEDEC standard

4. Silicon optimized for applications switching below <100kHz

5. Industry standard through-hole power package

Benefits

1. Increased ruggedness

2. Wide availability from distribution partners

3. Industry standard qualification level

4. High performance in low frequency applications

5. Standard pinout allows for drop in replacement

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 55 V

2. Gate to source voltage : VGSS = ± 16 V

3. Drain current : ID = 25 A

4. Drain power dissipation : PD = 57 W

5. Single pulse avalanche energy : Eas = 61 mJ

6. Channel temperature : Tch = 175 °C

7. Storage temperature : Tstg = -55 to +175 °C

Applications

The IRLR3105 MOSFET is power switching applications, including DC-DC converters, motor control, load switching, and power management in automotive, industrial, and consumer electronics.

IRLR3105 Datasheet PDF

General-Purpose Operational Amplifier

Description

IDT71256 is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using high-performance, high-reliability CMOS technology. Address access times as fast as 20ns are available with power consumption of only 350mW (typ.). The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to and remain in, a low-power standby mode as long as CS remains HIGH. This capability provides significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability where the circuit typically consumes only 5μW when operating off a 2V battery.

Features

1. High-speed address/chip select time
(1) Commercial: 20/25/35ns (max.)
(2) Industrial: 20/25/35ns (max.)
(3) Military: 25/35/45/55/70/85/100ns (max.)

2. Low-power operation

3. Battery Backup operation – 2V data retention

4. Produced with advanced high-performance CMOS technology

5. Input and output directly TTL-compatible

Pinouts

Applications

SRAM is widely used in a variety of applications, including embedded systems, telecommunications equipment, networking devices, industrial automation, and consumer electronics. It provides fast and reliable data storage for temporary working memory requirements in these systems.

IDT71256 Datasheet PDF

Schematic

IRLR3105 MOSFET – 55V Single N-Channel MOSFET