W20NM50 Datasheet PDF – 500V, 20A, N-Ch, MOSFET – ST

Part Number: W20NM50, STW20NM50

Function: N-CHANNEL 500V – 0.20Ω – 20A MDmesh Power MOSFET

Package : TO-247 Type

Manufacturer: STMicroelectronics

Image

W20NM50 mosfet STW20NM50

Description

This is 550V, 20A, N-Channel MOSFET.

The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

Pinout

W20NM50 datasheet pdf

Features

1. TYPICAL RDS(on) = 0.20Ω
2. HIGH dv/dt AND AVALANCHE CAPABILITIES
3. 100% AVALANCHE TESTED
4. LOW INPUT CAPACITANCE AND GATE CHARGE
5. LOW GATE INPUT RESISTANCE
6. TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS

Applications:

The MDmesh family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

W20NM50 Datasheet


 

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W45NM50 Datasheet PDF – N-ch, 500V, 45A, Power MOSFET

Part Number: W45NM50, STW45NM50

Function: N-channel 500 V, 45 A, Power MOSFET

Manufacturer: STMicroelectronics

Package: TO-247 Type

Image:
W45NM50 Image

Description

The MDmesh is a new revolutionary Power MOSFET technology that associates the Multiple Drain process with the company’s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitor’s products.

Pinouts:

W45NM50 Pinout

Features

1. 100% avalanche tested
2. High dv/dt and avalanche capabilities
3. Low input capacitance and gate charge
4. Low gate input resistance

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 45 A
4. Total Dissipation : Ptot = 390 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

W45NM50 Datasheet

W45NM50 Datasheet

W45NM50 pdf