This is one of the types of MOSFETs and is a kind of transistor.

Part Number: IRFP460

Function: N-Channel 500V, 18.4A, MOSFET

Package : TO-247 Type

Manufacturer: STMicroelectronics

Image and Pinouts:

Description

This is N-Channel 500V, 0.22Ω, 18.4A, PowerMesh II MOSFET.

The PowerMESH II is the evolution of the first  generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

Features

1. TYPICAL RDS(on) = 0.22Ω

2. EXTREMELY HIGH dv/dt CAPABILITY

3. 100% AVALANCHE TESTED

4. NEW HIGH VOLTAGE BENCHMARK

5. GATE CHARGE MINIMIZED

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDS = 500 V

2. Gate to source voltage : VGS = ± 30 V

3. Drain current: ID = 18.4 A

4. Drain power dissipation : Ptot = 220 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -65 to +150 °C

Applications:

1. SWITH MODE LOW POWER SUPPLIES (SMPS)

2. HIGH CURRENT, HIGH SPEED SWITCHING

3. DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES

 

IRFP460 Datasheet PDF Download

 

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 4NF20L, STN4NF20L

Function: N-channel 200 V, 1 A, Power MOSFET

Package: SOT-223 Type

Manufacturer: STMicroelectronics

Image:

Description

This is N-channel 200 V, 1.1 Ω, 1 A,  Low Gate Charge STripFET II Power MOSFET.

This N-channel 200 V realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters.

 

Features

1. 100% avalanche tested

2. Low gate charge

3. Exceptional dv/dt capability

 

Pinout

 

Absolute maximum ratings :

1. Gate-source voltage : VGS = ± 20 V

2. Drain current continuous (TC = 25 °C) : ID  = 1 A

3. Drain current continuous (TC = 100 °C0 : ID = 0.63 A

4. Drain current pulsed : IDM = 4 A

5. Total dissipation at TC = 25 °C : PTOT = 3.3 W

6. Peak diode recovery voltage slope : dv/dt = 20 V/ns

Applications:

1. Switching

4NF20L Datasheet

 

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