5N52U Datasheet – N-Ch 525V, 1.28Ohm Power MOSFET – ST

Part Number: 5N52U, STD5N52U

Function: N-channel 525 V, 1.28 Ω, 4.4 A, UltraFASTmesh™ Power MOSFET

Package: DPAK, TO-220FP, I2PAK  Type

Manufacturer: STMicroelectronics

Image

5N52U mosfet

Features

1. 100% avalanche tested

2. Outstanding dv/dt capability

3. Gate charge minimized

4. Very low intrinsic capacitances

5. Very low RDS(on)

6. Extremely low trr

Pinouts:
5N52U datasheet

Description

These devices are N-channel Power MOSFETs developed using UltraFASTmesh™ technology, which combines the advantages of reduced onresistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.

 

components

5N52U Datasheet


 

STD5N52U pdf

Other data sheets are available within the file: STD5N52U, STF5N52U, STI5N52U

P10NK80ZFP Datasheet – 800V, 9A, 40W, N-ch MOSFET – ST

Part Number: STP10NK80ZFP, Marking : P10NK80ZFP

Function : N-Channel 800V, 8A, Zener-Protected Supermesh Power MOSFET

Package: TO-220FP Type

Manufacturer: STMicroelectronics

Image

P10NK80ZFP mosfet

General Description

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.

Pinout
P10NK80ZFP datasheet pinout

Applications

1.  HIGH CURRENT, HIGH SPEED SWITCHING

2.  SWITCH MODE POWER SUPPLIES

3.  DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE

 

Product Summary

1. TYPICAL RDS(on) = 0.78Ω

2.  EXTREMELY HIGH dv/dt CAPABILITY

3. 100% AVALANCHE TESTED

4. GATE CHARGE MINIMIZED

5. VERY LOW INTRINSIC CAPACITANCES

6. VERY GOOD MANUFACTURING REPEATIBILITY

P10NK80ZFP Datasheet


 

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