Toshiba

2SD822 Datasheet – 600V, 7A, NPN, TO-3 – Toshiba

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This NPN transistor is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.

Part Number: 2SD822, D822

Function: 600V, 7A, NPN Transistor

Package: TO-3 Type

Manufacturer: Toshiba

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Description

This is 1500V, Silicon NPN transistor. The 2SD822 is a bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.  It is optimized for high-voltage switching, fast transition times, and robust operation under inductive load conditions.

Features of 2SD822

1. High collector-base voltage capability (VCBO = 1500V)

2. ow collector-emitter saturation voltage

3. High-speed switching

4. Glass Passivated Collector-Base Junction.

Pinout

2SD822

Absolute Maximum Ratings (Ta = 25 °C)

Parameter Symbol Value Unit
Collector-Base Voltage VCBO 1500 V
Collector-Emitter Voltage VCEO 600 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 7 A
Emitter Current IE -7 A
Power Dissipation (Tc = 25°C) PC 50 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55 to 150 °C

Electrical Characteristics

2SD822 Datasheet PDF

Advantages

1. High current gain makes it suitable for use in low-power amplifier circuits.

2. Low collector-emitter saturation voltage reduces power dissipation and improves efficiency in switching applications.

Application

  • CRT horizontal deflection output stage
  • Flyback transformer driver circuits
  • High-voltage pulse generators
  • Switching power stages with inductive loads

2SD822 Datasheet PDF

2SD822 pdf

B1642 Datasheet – 60V, 4A, PNP Transistor – 2SB1642

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Part Number : 2SB1642

Function: -60V, -4A, PNP Triple Diffused Type Transistor

Package: TO-220 Type

Manufacturer: Toshiba

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transistor B1642 pdf

Description

The B1642 is a high-power PNP silicon transistor in a TO-220F (or similar) package, designed especially for audio frequency output stages. It supports a collector current up to –4 A and a breakdown voltage of –60 V, and features low saturation voltage for efficient switching. It’s typically used in audio amplifiers, power amplifier stages, and complementary transistor pairs in push-pull outputs.

 

Features

  • Collector–Emitter breakdown voltage VCEO = –60 V (minimum)
  • Collector current (continuous) IC = –4 A
  • Low saturation voltage VCE(sat) = –1.5 V (max) at IC = –2.5 A, IB = –0.25 A
  • Wide DC current gain: hFE = 100 to 320 at moderate currents
  • Transition frequency fT ≈ 9 MHz
  • Collector power dissipation PC = 25 W (at case)
  • Collector–Base voltage VCBO = –60 V
  • Emitter–Base breakdown voltage VEBO = –7 V
  • Capacitance (Cob): ~50 pF (VCB = –10 V, f = 1 MHz)

 

Absolute Maximum Ratings (Ta = 25 °C)

Parameter Symbol Value Unit
Collector–Base voltage VCBO –60 V
Collector–Emitter voltage VCEO –60 V
Emitter–Base voltage VEBO –7 V
Collector current, continuous IC –4 A
Base current, continuous IB –1 A
Power dissipation (case) PC 25 W
Maximum junction temperature TJ 150 °C
Storage temperature Tstg –55 to +150 °C

B1642 pinout

 

Applications

  • Output stage in audio power amplifiers (PNP side)
  • Complementary transistor in push-pull amplifier topologies
  • Driver stage in class AB amplifiers
  • Power amplification for speaker drivers and stereo systems
  • General PNP high current switching roles in audio circuits

Alternative / Equivalent Products

  • 2SB1640 – a close PNP transistor variant with similar specs
  • 2SB1667 – alternative PNP transistor in audio designs
  • 2SA1943 (if complementary or higher voltage rating required)
  • BD140 / BD139 (lower power but common PNP alternatives)
  • MJE2955 – another PNP power transistor with somewhat higher voltage headroom

B1642 Datasheet