Toshiba

D526 Datasheet PDF – 80V, 4A, NPN Transistor – Toshiba

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This post explains for the npn transistor.

See the preview image and the PDF file for more information.

Part Number: D526, 2SD526

Function: 80V, 4A, NPN Transistor

Package: TO-220AB Type

Manufacturer: Toshiba Semiconductor

Image
D526 transistor

Description

This is 80V, 4A, NPN Triple Diffused Type Transistor.

Features

1. High Power Dissipation : Pc = 30W ( Tc = 25’C )

2. Good Linearity of hFE

3. Complementary to 2SB596

4. Recommend for 20 ~ 25W High Fidelity Audio Frequency Amplifier Output Stage.

D526 Pinout

D526 datasheet pinout

 

Maximum Ratings

1. Collector-Base Voltage: Vcbo = 80V

2.Collector-Emitter Voltage: Vceo = 80V

3. Emitter-Base Voltage: Vebo = 5V

4. Collector Current: Ic = 4A

5. Collector Power Dissipation : Pc = 30W

 

Applications

1. Power Amplifier

D526 Datasheet PDF


 

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K2961 Datasheet PDF – 60V, 2A, N-ch, MOSFET, 2SK2961

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Part Number: K2961, 2SK2961

Function: 60V, 2A, N-CHANNEL MOSFET

Package: TO-92MOD Type

Manufacturer: Toshiba Semiconductor

Image

K2961 mosfet toshiba

Description

This is 60V, 2A, Silicon N-Channel MOS Field Effect Transistor.

Features

1. Low drain-source ON resistance  : RDS (ON)= 0.2 Ω(typ.)

2. High forward transfer admittance  : |Yfs| = 2.0 S (typ.)

3. Low leakage current  : IDSS= 100 μA (VDS= 60 V)

4. Enhancement mode  : Vth= 0.8~2.0 V (VDS= 10 V, ID= 1 mA)

 

Absolute Maximum Ratings

1. Drain-source voltage: VDSS = 60 V

2. Drain-gate voltage (RGS= 20 kΩ): VDGR = 60  V

3. Gate to source voltage: VGSS = ± 20 V

4. Drain current: ID = 2 A

5. Drain power dissipation : PD = 0.9 W

6. Channel temperature: Tch = 150 °C

7. Storage temperature range : Tstg = -55 ~ 150 °C

 

Pinout for K2961

K2961 datasheet pdf

Applications:

1. Relay Drive

2. Motor Drive

3. DC-DC Converter

K2961 Datasheet


 

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