Part Number: K8A500, TK8A50D

Function: 500V, 8A, N-Chnannel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba

Image :

Description

This is Silicon N Channel MOS Type Field Effect Transistor.

This Part Number is K8A500 -> Correct Part Number K8A50D, Full Part Number TA8A50D

Features

1. Low drain-source ON-resistance: RDS (ON)= 0.7 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 4.0 S (typ.)

3. Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 8 A

4. Drain Power Dissipation: Pd = 40 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Electrical Characteristics

 

K8A500 Datasheet PDF Download

Other data sheets are available within the file: K8A500, K8A50D, TK8A50D

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Part Number: K2845, 2SK2845

Function:  Silicon N-Channel MOSFET

Package: TO 251, SC-64 Pin Type

Manufacturer: Toshiba

Image:

Description

This is Silicon N-Channel MOS Type Field Effect Transistor.

Features

1. Low drain-source ON-resistance : RDS (ON) = 8.0 Ω (typ.)
2. High forward transfer admittance : |Yfs| = 0.9 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
4.Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Pinout

Absolute Maximum Ratings

1. Drain-source voltage: VDSS = 900 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 900 V
3. Gate-source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C): PD = 40 W
5. Single-pulse avalanche energy : EAS = 324 mJ

Applications:

Chopper Regulator, DC/DC Converter and Motor Drive

K2845 Datasheet

 

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