K2843 Datasheet – 600V, 10A, N-ch, MOSFET – Toshiba

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K2843, 2SK2843

Description

Silicon N Channel MOS Type (π−MOSV) Field Effect Transistor

Package: TO-220 type

Manufacturer: Toshiba

Image

K2843 datasheet pdf pinout

Description

This is 600V, 10A, MOSFET.

Features

1. Low drain−source ON resistance  : RDS (ON)= 0.54 Ω(typ.)
2. High forward transfer admittance  : |Yfs| = 9.0 S (typ.)
3. Low leakage current  : IDSS= 100 μA (max) (VDS= 600 V)
4. Enhancement mode  : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

K2843 mosfet toshiba

Absolute Maximum Ratings (Ta = 25°C)

1. Drain source voltage: VDSS = 600 V
2. Drain gate voltage (RGS = 20 kΩ): VDGR = 600 V
3. Gate source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C): PD = 45 W
5. Single pulse avalanche energy : EAS = 363 mJ
6. Avalanche current : IAR = 10 A
7. Repetitive avalanche energy : EAR = 5.0 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature range : Tstg = -55~150 °C

Applications:

1. Chopper Regulator, DC−DC Converter and Motor Drive

K2843 Datasheet


 

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D2012 Datasheet PDF – 60V, 3A, NPN Transistor, 2SD2012

This is one of the transistor types.

Part Number: D2012, 2SD2012

Function :  Silicon NPN Triple Diffused Type Transistor

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Image

D2012 transistor

Description

 

1. Low saturation voltage: VCE (sat)= 0.4 V (typ.) (IC= 2A / IB= 0.2A)

2. High power dissipation: PC= 25 W (Tc = 25°C)

Pinout
D2012 datasheet pinout
Absolute Maximum Ratings

1. Collector-base voltage : VCBO = 60 V

2. Collector-emitter voltage : VCEO = 60 V

3. Emitter-base voltage : VEBO = 7 V

4. Collector current : IC = 3 A

5. Base current : IB = 0.5 A

Applications:

1. Audio Frequency Power Amplifier

D2012 Datasheet

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