B1015 Datasheet – Vcbo= -60V, PNP Transistor – Toshiba

Part Number: B1015, 2SB1015

Description

TRANSISTOR ( Silicon PNP Triple Diffused Type )

Manufacturer: Toshiba Semiconductor

Image

B1015 pnp transistor

 

Description

0. Audio Frequency Power Amplifier Applications

1. Low collector saturation voltage : VCE (sat)= −1.7 V (max),  (IC= −3 A, IB= −0.3 A)

2. Collector power dissipation : PC= 25 W (Tc = 25°C)

 

Pinout

B1015 datasheet pinout

( 1. Base, 2. Collector, 3. Emiiter )

 

Maximum Ratings (Ta 25°C)

1. Collector-base voltage : VCBO = -60 V

2. Collector-emitter voltage : VCEO = -60 V

3. Emitter-base voltage : VEBO = -7V

4. Collector current : IC = -3A

5. Base current : IB = -0.5A

 

B1015 Datasheet


 

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RU7088R Datasheet PDF – 70V, 80A, N-Ch, MOSFET

Part Number: RU7088R

Function: 70V, 80A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Ruichips Semiconductor

Image

RU7088R datasheet mosfet

Description

This is N-Channel Advanced Power MOSFET.

Applications

1. Switching Application Systems
2. Inverter Systems

Features for RU7088R

1. 70V/80A, RDS (ON) =6.5mW (Type) VGS=10V IDS=40A
2. Ultra Low On-Resistance
4. Exceptional dv/dt capability
5. Fast Switching and Fully Avalanche Rated
6. 100% avalanche tested
7. 175°C Operating Temperature
8. Lead Free and Green Available

Pinouts:
RU7088R pinout

Absolute Maximum Ratings (Tc = 25°C)

1. Drain to source voltage: VDSS = 70 V
2. Gate to source voltage: VGSS = ± 25 V
3. Drain current: ID = 80 A
4. Drain power dissipation : PD = 150 W
5. Single pulse avalanche energy : Eas = 150 mJ
6. Maximum Junction Temperature: Tj = 175 °C
7. Storage temperature: Tstg = -55 to +175 °C

RU7088R Datasheet PDF Download


 

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