Part Number: D669, 2SD669
Function: 120V, 1.5A, NPN Transistor
Package: TO-126 MOD Type
Manufacturer: Hitachi Semiconductor
Images:
Description
D669 is 120V, 1.5A, Silicon NPN Epitaxial Transistor.
Characteristics:
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 180 V
2. Collector to Emitter Voltage: Vceo = 120 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 1.5 V
5. Collector Dissipation : Pc = 1 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Application:
1. Low frequency power amplifier complementary pair with 2SB649/A
D669 PDF Datasheet
