FDN308P Datasheet – 20V, 1.5A, P-Ch, MOSFET ( PDF )

Part Number: FDN308P

Function: P-Channel 2.5V Specified PowerTrench

Package: SOT-23 Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

FDN308P datasheet

 

Description

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management
applications with a wide range of gate drive voltage (2.5V – 12V).

Features

• -20 V, -1.5 A. Rds(on)= 125 mΩ@ Vgs= -4.5 V, Rds(on)= 190 mΩ@ Vgs= -2.5 V

• Fast switching speed

• High performance trench technology for extremely low Rds(on)

• SuperSOT -3 provides low RDS(ON)and 30% higher power handling capability than SOT23 in the same footprint

 

Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = – 20 V
2. Gate to source voltage: VGSS = ± 12 V
3. Drain current: ID = 1.5 A
4. Maximum Power Dissipation: Pd = 0.5 W
5. Channel temperature: Tch =  150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

• Power management

• Load switch

• Battery protection

Other data sheets are available within the file: FDN308

 

FDN308P Datasheet PDF Download


FDN308P pdf