Part Number: FGA40N60UFD
Function: 600V, Ultrafast IGBT
Package: TO-3P type
Manufacturer: Fairchild Semiconductor
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Description
FGA40N60UFD is Ultrafast IGBT. Fairchild’s UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
A 600V Ultrafast IGBT (Insulated Gate Bipolar Transistor) is a type of power semiconductor device used for high-voltage switching applications in power electronics. IGBTs are widely used in various power conversion and control circuits, offering the advantages of both MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and bipolar junction transistors (BJTs).
Features
1. High speed switching
2. Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A
3. High input impedance
4. CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to Emitter Voltage : Vces = 600 V
2. Gate to Emitter Voltage : VGes = ± 20 V
3. Collector Current : Ic = 40 A
4. Maxim power dissipation : PD = 160 W
5. Operating Junction Temperature : Tch = -55 to +150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Ultrafast IGBTs are commonly used in high-frequency switching applications, such as in motor drives, induction heating, power inverters, switching power supplies, and other high-power electronics. Their ability to switch rapidly and handle high voltages and currents makes them suitable for applications requiring precise control and high efficiency.
Applications:
1. AC & DC motor controls, general purpose inverters, robotics, and servo controls.
FGA40N60UFD PDF Datasheet
