Part Number: FQB5N20L
Function: 200V, 4.5A, N-Channel MOSFET
Package: D2PAK Type
Manufacturer: Fairchild Semiconductor
Image and Pinouts:
Description
This is 200V, 4.5A, LOGIC N-Channel MOSFET.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
Features
1. 4.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V
2. Low gate charge ( typical 4.8 nC)
3. Low Crss ( typical 6.0 pF)
4. Fast switching
5. 100% avalanche tested
6. Improved dv/dt capability
7. Low level gate drive requirement allowing direct operation from logic drivers
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 200 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 4.5 A (Tc = 25°C)
4. Power Dissipation: Pd = 3.13 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: FQB5N20LTM, FQI5N20L
FQB5N20L Datasheet PDF Download
