FQB5N20L Datasheet – 200V, N-Ch, MOSFET, Transistor

Part Number: FQB5N20L

Function: 200V, 4.5A, N-Channel MOSFET

Package: D2PAK Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:
FQB5N20L datasheet


This is 200V, 4.5A, LOGIC N-Channel MOSFET.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.


1. 4.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V

2. Low gate charge ( typical 4.8 nC)

3. Low Crss ( typical 6.0 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

7. Low level gate drive requirement allowing direct operation from logic drivers


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 4.5 A (Tc = 25°C)

4. Power Dissipation: Pd = 3.13 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C


Other data sheets are available within the file: FQB5N20LTM, FQI5N20L

FQB5N20L Datasheet PDF Download

FQB5N20L pdf