Part Number: FQP10N20C
Function: 200V, 9.5A, N-Channel QFET MOSFET
Package: TO-220, TO-220F
Manufacturer: Fairchild Semiconductor
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Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
Features
1. 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
2. Low gate charge ( typical 20 nC)
3. Low Crss ( typical 40.5 pF)
4. Fast switching
5. 100% avalanche tested
6. Improved dv/dt capability
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 200 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 9.5 A
4. Power Dissipation: Pd = 72 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
FQP10N20C Datasheet PDF Download
Other data sheets are available within the file: 10N20C, FQP10N20C, FQPF10N20C