FQP10N20C Datasheet PDF – 200V, 9.5A, N-Ch, MOSFET

Part Number: FQP10N20C

Function: 200V, 9.5A, N-Channel QFET MOSFET

Package: TO-220, TO-220F

Manufacturer: Fairchild Semiconductor

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FQP10N20C datasheet



These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.


1. 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V

2. Low gate charge ( typical 20 nC)

3. Low Crss ( typical 40.5 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 9.5 A
4. Power Dissipation: Pd = 72 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C


FQP10N20C Datasheet PDF Download

FQP10N20C pdf

Other data sheets are available within the file: 10N20C, FQP10N20C, FQPF10N20C