FQPF2N90 Datasheet PDF – 900V, 1.4A, N-Channel, MOSFET

Part Number: FQPF2N90

Function: 900V, N-Channel MOSFET

Package: TO-220F type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

FQPF2N90 datasheet



This is 900V, 1.4A, N-Channel MOSFET.

These N-Channel enhancement mode power field effect transistors are produced using Fairchid’s proprietary, planar stripe, DMOS technolgoy. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.


1. 1.4A, 900V, Rds(on) = 7.2Ohm @ Vgs =10V

2. Low gate charge (typical 12 nC)

3. Low Crss (typical 5.5 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 1.4 A (Tc = 25°C)

4. Power Dissipation: Pd = 35 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: FQPF-2N90, FQPF2N90, 2N90


FQPF2N90 Datasheet PDF Download

FQPF2N90 pdf