Part Number: FR3707Z, IRFR3707Z
Function: 30V, 56A, HEXFET POWER MOSFET
Package: D-Pak, I-Pak Type
Manufacturer: International Rectifier
Images:
Description
This is 30V, 9.5nC, 56A, HEXFET Power MOSFET.
HEXFET Power MOSFET is a brand name for a MOSFET transistor manufactured by International Rectifier (now part of Infineon Technologies). It is characterized by fast switching and low gate drive current.
This MOSFET can be applied up to 30 V between drain and source.
The total gate charge (Q_g) is the amount of charge required to fully charge the gate of the MOSFET. This is an important parameter that determines the switching speed and the requirements of the gate driver. The lower the value, the faster the switching and the lower the driver power requirement.
Benefits:
1. Very Low RDS(on) at 4.5V VGS
2. Ultra-Low Gate Impedance
3. Fully Characterized Avalanche Voltage and Current
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 56 A
4. Drain Power Dissipation: Pd = 50 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +175 °C
Applications:
1. High Frequency Synchronous Buck Converters for Computer Processor Power
2. High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
FR3707Z Datasheet
