IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
Part Number: G30N60, HGTG30N60A4, G30N60A4
Function: 600V, SMPS Series N-Channel IGBT
Package: TO-247 Type
Manufacturer: Fairchild
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Description
G30N60 is 600V, SMPS Series N-Channel IGBT. The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49343.
Features
• >100kHz Operation at 390V, 30A
• 200kHz Operation at 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time. . 60ns at TJ = 125°C
• Low Conduction Loss
When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.
These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.
G30N60 PDF Datasheet
