Part Number: G80N60UFD
Function: Ultrafast IGBT ( Vces = 600V )
Package: TO-3P Type
Manufacturer: Fairchild Semiconductor
This is 600V, Ultrafast IGBT.
Fairchild’s UFD series of Insulated Gate Bipolar Transistors (IGBTs
The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
1. High speed switching
2. Low saturation voltage : VCE(sat)= 2.1 V @ IC = 40A
3. High input impedance
4. CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 600 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 80 A
4. Maximum Power Dissipation: Pd = 195 W (Tc = 25°C)
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
1. AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G80N60UFD Datasheet PDF Download
Other data sheets are available within the file: G80N60, SGH80N60UFD