GP30B120KD-E PDF – 1200V, 60A, IGBT – IRGP30B120KD-E

What is GP30B120KD-E?

This is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications.

The GP30B120KD-E IGBT has a maximum collector current rating of 60A and a maximum collector-emitter voltage rating of 1200V. It is housed in a TO-247 package and has three terminals: the emitter, the collector, and the gate.

The function of this semiconductor is IRGP30B120KD-E.

Manufacturer: International Rectifier

Preview images :

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transistor GP30B120KD-E pdf pinout

Description

The IGBT has a low on-state voltage drop and a fast switching speed, making it ideal for high-frequency and high-efficiency power electronics applications such as motor drives, power supplies, and inverters. It also has a built-in temperature sensor that can be used to monitor the device’s temperature and protect it from thermal damage.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Overall, the IRGP30B120KD-E IGBT is a reliable and efficient component that is widely used in high-power switching applications where fast switching and high current handling are required.

Features

• Low VCE(on) Non Punch Through (NPT) Technology

• Low Diode VF (1.76V Typical @ 25A & 25°C)

• 10 µs Short Circuit Capability

• Square RBSOA

• Ultrasoft Diode Recovery Characteristics

• Positive VCE(on) Temperature Coefficient

• Extended Lead TO-247AD Package

 

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GP30B120KD-E datasheet igbt

Benefits

• Benchmark Efficiency for Motor Control Applications

• Rugged Transient Performance

• Low EMI

• Significantly Less Snubber Required

• Excellent Current Sharing in Parallel Operation

• Longer leads for Easier Mounting

GP30B120KD-E PDF Datasheet