What is GP30B120KD-E?
This is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications.
The GP30B120KD-E IGBT has a maximum collector current rating of 60A and a maximum collector-emitter voltage rating of 1200V. It is housed in a TO-247 package and has three terminals: the emitter, the collector, and the gate.
The function of this semiconductor is IRGP30B120KD-E.
Manufacturer: International Rectifier
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Description
The IGBT has a low on-state voltage drop and a fast switching speed, making it ideal for high-frequency and high-efficiency power electronics applications such as motor drives, power supplies, and inverters. It also has a built-in temperature sensor that can be used to monitor the device’s temperature and protect it from thermal damage.
Overall, the IRGP30B120KD-E IGBT is a reliable and efficient component that is widely used in high-power switching applications where fast switching and high current handling are required.
Features
• Low VCE(on) Non Punch Through (NPT) Technology
• Low Diode VF (1.76V Typical @ 25A & 25°C)
• 10 µs Short Circuit Capability
• Square RBSOA
• Ultrasoft Diode Recovery Characteristics
• Positive VCE(on) Temperature Coefficient
• Extended Lead TO-247AD Package
Benefits
• Benchmark Efficiency for Motor Control Applications
• Rugged Transient Performance
• Low EMI
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation
• Longer leads for Easier Mounting
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