GP30B120KD-E PDF – 1200V, 60A, IGBT – IRGP30B120KD-E

What is GP30B120KD-E?

This is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications.

The GP30B120KD-E IGBT has a maximum collector current rating of 60A and a maximum collector-emitter voltage rating of 1200V. It is housed in a TO-247 package and has three terminals: the emitter, the collector, and the gate.

The function of this semiconductor is IRGP30B120KD-E.

Manufacturer: International Rectifier

Preview images :

1 page
GP30B120KD-E image


The IGBT has a low on-state voltage drop and a fast switching speed, making it ideal for high-frequency and high-efficiency power electronics applications such as motor drives, power supplies, and inverters. It also has a built-in temperature sensor that can be used to monitor the device’s temperature and protect it from thermal damage.

Overall, the IRGP30B120KD-E IGBT is a reliable and efficient component that is widely used in high-power switching applications where fast switching and high current handling are required.


• Low VCE(on) Non Punch Through (NPT) Technology

• Low Diode VF (1.76V Typical @ 25A & 25°C)

• 10 µs Short Circuit Capability

• Square RBSOA

• Ultrasoft Diode Recovery Characteristics

• Positive VCE(on) Temperature Coefficient

• Extended Lead TO-247AD Package


• Benchmark Efficiency for Motor Control Applications

• Rugged Transient Performance

• Low EMI

• Significantly Less Snubber Required

• Excellent Current Sharing in Parallel Operation

• Longer leads for Easier Mounting

2 page

GP30B120KD-E Datasheet