This post explains for the power MOSFET.
The Part Number is P55NE06, STP55NE06.
The function of this semiconductor is 60V, 55A, N-channel enhancement mode MOSFET.
The package is TO-220, TO-220FP Type
Preview images :
This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remark-able manufacturing reproducibility.
An N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.
In an N-channel enhancement mode MOSFET, the conductive channel is formed by applying a positive voltage to the gate terminal, which creates an electric field that attracts negatively charged electrons from the source region to the channel region. This increases the conductivity of the channel and allows current to flow between the source and drain terminals.
One of the key advantages of an N-channel enhancement mode MOSFET is its ability to operate with very low voltage and power levels, which makes it well-suited for use in battery-powered devices. It also has a high input impedance, which makes it compatible with digital logic circuits and other low-power devices.
1. TYPICAL RDS(on) = 0.019 Ω
2. EXCEPTIONAL dv/dt CAPABILITY
3. 100% AVALANCHE TESTED
5. HIGH dv/dt CAPABILITY
6. APPLICATION ORIENTED CHARACTERIZATION
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 55 A
4. Allowable Power Dissipation: Pd = 130 W (Tc = 25°C)
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -65 to +175 °C
1. DC MOTOR CONTROL
2. DC-DC & DC-AC CONVERTERS
3. SYNCHRONOUS RECTIFICATION