GT30F122 Datasheet PDF – 300V, 120A IGBT, 30F122, Toshiba

Part Number: GT30F122

Function: IGBT / Insulated Gate Bipolar Transistor, 300V, 120A, Silicon N-Channel

Package: TO-220SIS Type

Manufacturer: Toshiba

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The GT30F122 is 300V, 120A, Insulated Gate Bipolar Transistor.

GT30F122 Datasheet


The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching

(2) Low collector-emitter saturation voltage even in the large current area

(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications

(4) High input impedance allows voltage drives

(5) Available in a variety of packages

GT30F122 Datasheet
30F122 pdf

Other data sheets are available within the file: 30F122

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