Part Number: GT30F122
Function: IGBT / Insulated Gate Bipolar Transistor, 300V, 120A, Silicon N-Channel
Package: TO-220SIS Type
Manufacturer: Toshiba
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Description
The GT30F122 is 300V, 120A, Insulated Gate Bipolar Transistor.
The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.
(1) IGBTs also featuring fast switching
(2) Low collector-emitter saturation voltage even in the large current area
(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of packages
GT30F122 Datasheet
Other data sheets are available within the file: 30F122
