This is one of the IGBT types. The IGBT is insulated-gate bipolar transistor.
Part Number: IHW20N120R2
Marking : H20R1202
Package: TO-247 Type
Function: Reverse Conducting IGBT with monolithic body diode / Vce = 1200V / Ic =20A
Manufacturer: Infineon Technologies
Image and Pinouts:
Description
This is a 1200V, 20A, IGBT. Reverse Conducting IGBT with monolithic body diode.
The IGBT is insulated-gate bipolar transistor.
Features
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• TrenchStop and Fieldstop technology for 1200 V applications offers :
(1) Very tight parameter distribution
(2) High ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
Applications:
1. Inductive Cooking
2. Soft Switching Applications
Absolute maximum ratings ( Tc=25°C )
1. Collector-emitter voltage : Vce = 1200 V
2. DC collector current : Ic = 40 A
3. Gate-emitter voltage : Vge = ± 20 V
4. Power dissipation : Ptot = 330 W
H20R1202 Datasheet PDF
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