This post explains for the IGBT H20R1203.
The IGBT is insulated-gate bipolar transistor.
The Part Number is IHW20N120R3
The packages is TO-247-3 pin type.
The function of this semiconductor is 1200V, 20A, IGBT.
Manufacturer: Infineon
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Description
H20R1203 is 1200V, 20A, IGBT. A reverse conducting IGBT (Insulated Gate Bipolar Transistor) with a monolithic body diode is a type of IGBT that incorporates a built-in or integrated diode within its structure. This diode, also known as a body diode or freewheeling diode, provides a low-loss path for current flow in the reverse direction when the IGBT is in the off state.
The IGBT is a power semiconductor device that combines the features of a MOSFET (voltage-controlled operation) and a bipolar transistor (low on-state voltage drop). It is commonly used in power electronics applications for high-power switching and amplification.
Reverse conducting IGBTs with monolithic body diodes are commonly used in various applications, including motor drives, power inverters, uninterruptible power supplies (UPS), and industrial power systems. They offer efficient and reliable switching performance while simplifying circuit design and reducing component count.
Features
• Powerful monolithic body diode with low forward voltage designed for soft commutation only
• TRENCHSTOPTM technology applications offers:
– very tight parameter distribution
– high ruggedness, temperature stable behavior
– low VCEsat
– easy parallel switching capability due to positive temperature coefficient in VCEsat
• Low EMI
• Qualified according to JESD-022 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
Marking H20R1203
Applications
1. Inductive cooking
2. Inverterized microwave ovens
3. Resonant converters
4. Soft switching applications