IRG7PK35UD1PBF Datasheet – 1400V, 40A, IGBT ( PDF )

Part Number: IRG7PK35UD1PBF

Function: 1.4kV, 40A, Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

Package: TO-247AC Type

Manufacturer: International Rectifier

Image and Pinouts:

IRG7PK35UD1PBF datasheet

 

Description

This is Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode.

Features

1. V ces = 1400V

2. Ic = 20A, Tc = 100 °C

3. Tj(max) = 150 °C

4. Vce(on) typ. = 2.0V @ Ic = 20A

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1400 V

2. Maximum Power dissipation : Pc = 167 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -40 to +150 °C

Applications

1. Induction heating

2. Microwave ovens

3. Soft switching applications

Other data sheets are available within the file:

IRG7PK35UD1-EPBF, IRG7PK35

 

IRG7PK35UD1PBF Datasheet PDF Download


IRG7PK35UD1PBF pdf

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