Part Number: IXFH26N60Q
Function: HiPerFET Power MOSFET ( Vdss = 600V, Id25 = 26A, Rds(on) = 0.25 Ohm )
Package: TO-247 Type
Manufacturer: IXYS
Image :
Description
This is N-Channel Enhancement Mode Power MOSFET. Avalanche Rated, High dv/dt, Low Qg.
Features
1. Low gate charge
2. International standard packages
3. Epoxy meet UL 94 V-0, flammability classification
4. Low RDS (on) HDMOSTM process
5. Rugged polysilicon gate cell structure
6. Avalanche energy and current rated
7. Fast intrinsic Rectifier
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 26 A
4. Drain Power Dissipation: Pd = 350 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Advantages :
1. Easy to mount
2. Space savings
3. High power density
